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this is information on a product in full production. november 2012 doc id 18281 rev 3 1/12 12 STW47NM60ND n-channel 600 v, 0.075 typ., 35 a fdmesh? ii power mosfet (with fast diode) in a to-247 package datasheet ? production data features the worldwide best r ds(on) *area amongst the fast recovery diode devices 100% avalanche tested low input capacitance and gate charge low gate input resistance extremely high dv/dt and avalanche capabilities. application switching applications ? automotive description this device is an n-channel power mosfet realized using the second generation of mdmesh? technology known as fdmesh? ii. this revolutionary power mosfet associates a new vertical structure to the company?s strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. it is therefore strongly recommended for bridge topologies, in particular zvs phase-shift converters. figure 1. internal schematic diagram order code v ds @ t jmax r ds(on) max i d STW47NM60ND 650 v 0.088 35 a 1 2 3 to-247 $0y ' * 6 table 1. device summary order code marking package packaging STW47NM60ND 47nm60nd to-247 tube www.st.com
contents STW47NM60ND 2/12 doc id 18281 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STW47NM60ND electrical ratings doc id 18281 rev 3 3/12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 600 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 35 a i d drain current (continuous) at t c = 100 c 22 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 140 a p tot total dissipation at t c = 25 c 255 w dv/dt (2) 2. i sd 35 a, di/dt 600 a/s, v dd = 80% v (br)dss peak diode recovery voltage slope 40 v/ns t stg storage temperature ?55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit rthj-case thermal resistance junction-case max 0.49 c/w rthj-amb thermal resistance junction-ambient max 50 c/w table 4. avalanche characteristics symbol parameter value unit i as avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 14 a e as single pulse avalanche energy (starting t j =25 c, i d =i as , v dd =50 v) 1000 mj
electrical characteristics STW47NM60ND 4/12 doc id 18281 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified). table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v v ds = 600 v, t j = 125 c 10 100 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 17.5 a 0.075 0.088 table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward transconductance v ds =15 v , i d = 17.5 a - 17 - s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 4200 180 5 - pf pf pf c oss eq. (2) 2. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v ds equivalent output capacitance v gs = 0, v ds = 0 to 480 v - 530 - pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 35 a, v gs = 10 v, (see figure 15) - 120 24 52 - nc nc nc r g gate input resistance f=1 mhz gate dc bias=0 test signal level = 20 mv open drain -1.7 -
STW47NM60ND electrical characteristics doc id 18281 rev 3 5/12 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f tu r n - o n d e l ay t i m e rise time turn-off delay time fall time v dd = 300 v, i d = 17.5 a r g =4.7 v gs = 10 v (see figure 14) - 30 40 120 50 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min typ. max unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 35 140 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 35 a, v gs = 0 - 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 35 a, di/dt = 100 a/s v dd = 100 v (see figure 16) - 190 1.6 17 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 35 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 16) - 280 3.0 22 ns c a
electrical characteristics STW47NM60ND 6/12 doc id 18281 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. transconductance figure 7. static drain-source on resistance i d ( a ) 10 2 10 1 10 0 10 -1 10 -1 10 0 10 1 10 2 v d s (v) 10 s 100 s 1m s 10m s oper a tion in thi s a re a i s limited b y m a x r d s (on) am0150 8 v1 9 '6 9 , ' $ 9 9 9 *6 9 $0y 9 *6 9 , ' $ 9 '6 9 $0y 0 10 20 i d (a) 0.5 5.5 10.5 20.5 g f s ( s ) 25 515 15.5 3 0 3 5 t j =150c t j =25c t j =-50c am01511v1 0 10 20 i d (a) 0.060 0.065 0.070 0.0 8 0 r d s (on) ( ) 0.075 3 0 0.0 8 5 v g s = 10 v am01512v1
STW47NM60ND electrical characteristics doc id 18281 rev 3 7/12 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics figure 13. normalized b vdss vs temperature 4 j q& 9 *6 9 9 '' 9 , ' $ 9 '6 9 9 '6 $0y 9 '6 9 & s) &lvv &rvv &uvv $0y -50 0 t j (c) 0. 8 1.0 v g s (th) (norm) -25 25 50 75 100 125 0.7 0.9 1.1 i d = 250 a am01515v1 -50 0 t j (c) 0.5 0.9 1. 3 2.1 r d s (on) (norm) -25 25 1.7 50 75 100 125 0.7 1.1 1.5 1.9 i d = 17.5 a v g s = 10 v am01516v1 0 10 i s d (a) 0.4 0.6 0. 8 v s d (v) 515 1.0 20 25 3 0 3 5 0.5 0.7 0.9 t j =150c -50c 25c am01517v1 -50 0 t j (c) 0.9 3 0.97 1.01 bv (d ss ) (v) -25 25 1.05 50 75 100 125 i d = 1 ma am0151 8 v1
test circuits STW47NM60ND 8/12 doc id 18281 rev 3 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive waveform figure 19. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STW47NM60ND package mechanical data doc id 18281 rev 3 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 9. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
package mechanical data STW47NM60ND 10/12 doc id 18281 rev 3 figure 20. to-247 drawing 0075 3 25_g
STW47NM60ND revision history doc id 18281 rev 3 11/12 5 revision history table 10. document revision history date revision changes 26-nov-2010 1 first release. 11-feb-2011 2 updated coverpage, table 5 and section 4 . 30-nov-2012 3 updated: ? capacitances and gate charge values on table 6 ? figure 4 , figure 5 , figure 7 , figure 8 , figure 9 , figure 10 , figure 11 and figure 13 ? section 4: package mechanical data minor text changes on the cover page to improve readability.
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